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| DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. PINNING 1 2 PMBFJ174 to 177 handbook, halfpage 3 d s g 1 = drain 2 = source 3 = gate Note 1. Drain and source are interchangeable. Marking codes: 174 175 176 177 : p6X : p6W : p6S : p6Y Fig.1 Simplified outline and symbol, SOT23. Top view MAM386 QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Gate current Total power dissipation up to Tamb = 25 C Drain current -VDS = 15 V; VGS = 0 Drain-source ON-resistance -VDS = 0,1 V; VGS = 0 RDS on < 85 125 250 300 Ptot -IDSS max. PMBFJ174 > < 20 135 7 70 300 175 176 2 35 177 1,5 mA 20 mA mW VDS VGSO -IG max. max. max. 30 30 50 V V mA April 1995 2 Philips Semiconductors Product specification P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (d.c.) Total power dissipation up to Tamb = 25 C(1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified Rth j-a = Ptot Tstg Tj max. max. VDS VGSO VGDO -IG max. max. max. max. PMBFJ174 to 177 30 30 30 50 300 -65 to + 150 150 V V V mA mW C C 430 K/W PMBFJ174 Gate cut-off current VGS = 20 V; VDS = 0 Drain cut-off current -VDS = 15 V; VGS = 10 V Drain current -VDS = 15 V; VGS = 0 Gate-source breakdown voltage IG = 1 A; VDS = 0 Gate-source cut-off voltage -ID = 10 nA; VDS = -15 V Drain-source ON-resistance -VDS = 0,1 V; VGS = 0 Note 1. Mounted on a ceramic substrate of 8 mm x 10 mm x 0,7 mm. RDS on < 85 VGS off V(BR)GSS > > < 30 5 10 -IDSS -IDSX < > < 1 20 135 IGSS < 1 175 1 1 7 70 176 1 1 2 35 177 1 nA 1 nA 1,5 mA 20 mA 30 3 6 30 30 V 1 0,8 V 4 2,25 V 125 250 300 April 1995 3 Philips Semiconductors Product specification P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V VGS = VDS = 0 Feedback capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Switching times (see Fig.2 + 3) Delay time Rise time Turn-on time Storage temperature Fall time Turn-off time Test conditions: td tr ton ts tf toff -VDD VGS off RL VGS on Crs typ. PMBFJ174 typ. typ. typ. typ. typ. typ. 2 5 7 5 10 15 10 12 560 0 Cis Cis typ. typ. PMBFJ174 to 177 8 30 4 175 5 10 15 10 20 30 6 8 1200 0 176 15 20 35 15 20 35 6 6 2000 0 177 pF pF pF 20 ns 25 ns 45 ns 20 ns 25 ns 45 ns 6V 3V 2900 0V handbook, halfpage -VDD 50 Vout RL Vin 50 OUTPUT D.U.T INPUT VGSoff 90% 10% 10% 10% 90% tf ts MBK292 90% tr td MBK293 Rise time input voltage < 1 ns Fig.2 Switching times test circuit Fig.3 Input and output waveforms td + tr = ton ts + tf = toff April 1995 4 Philips Semiconductors Product specification P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBFJ174 to 177 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1995 5 Philips Semiconductors Product specification P-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values PMBFJ174 to 177 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 |
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